CSD60N62 Datasheet, CASS

* VDS=60V；ID=65A@ VGS=10V； RDS(ON)<8.2mΩ @ VGS=10V
* Ultra Low On-Resistance
* High UIS and UIS 100% Test Application
* Hard Switched and High Frequency C.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features
* VDS=60V；ID.

The CSD60N62 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features
* VDS=60V；ID=65A@ VGS=10V； RDS(ON)<8.2m.