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N-Channel Trench Power MOSFET
General Description
The CSD60N62 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.
Features
● VDS=60V；ID=65A@ VGS=10V； RDS(ON)<8.2mΩ @ VGS=10V
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
CSD60N62
To-252 Top View
Schematic Diagram
VDS = 60 V ID = 65 A RDS(ON) = 6.8 mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
CSD60N62
CSD60N62
TO-252
Reel Size -
Table 1.
CSD60N62 Datasheet
