Datasheet4U Logo Datasheet4U.com

CSD60N70 - N-Channel Trench Power MOSFET

Description

The CSD60N70 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.

Features

  • VDS=60V；ID=56A@ VGS=10V； RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number CSD60N70
Manufacturer CASS
File Size 570.04 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CSD60N70 Datasheet

📁 Similar Datasheet

  • CSD600 - PNP PLASTIC POWER TRANSISTORS (CDIL)
  • CSD600K - PNP PLASTIC POWER TRANSISTORS (CDIL)
  • CSD655 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR (CDIL)
  • CSD667 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR (CDIL)
  • CSD-4xxx - NUMERIC/ALPHANUMBERIC DISPLAY (ETC)
  • CSD-822A9 - (CSD-822A9 / CSD-823A9) Digits Display (China Semiconductor)
  • CSD-822B7 - (CSD-822B7 / CSD-823B7) Digits Display (China Semiconductor)
  • CSD-822E - (CSD-822E / CSD-823E) Digits Display (China Semiconductor)
  • CSD-822G - (CSD-822G / CSD-823G) Digits Display (China Semiconductor)
  • CSD-822M9 - (CSD-822M9 / CSD-823M9) Digits Display (China Semiconductor)
Other Datasheets by CASS

Full PDF Text Transcription

Click to expand full text
N-Channel Trench Power MOSFET General Description The CSD60N70 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features ● VDS=60V；ID=56A@ VGS=10V； RDS(ON)<9.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CSD60N70 To-252 Top View Schematic Diagram VDS = 60 V ID = 56A RDS(ON) = 7.5mΩ Package Marking and Ordering Information Device Marking Device Device Package CSD60N70 CSD60N70 TO-252 Reel Size - Table 1.
Published: |