CASS CSD60N62
The CSD60N62 is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | CSD60N62 |
|---|---|
| Datasheet | CSD60N62 Download |
| Manufacturer | CASS |
| Description | N-Channel Trench Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.FEATURES
● VDS=60V；ID=65A@ VGS=10V； RDS(ON)<8.2mΩ @ VGS=10V● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply CSD60N62 To-252 Top View Schematic Diagram VDS = 60 V ID = 65 A RDS(ON) = 6.8 mΩ Package Marking and Ordering Information Device Marking Device Device Package CSD60N62 CSD60N62 TO-252 Reel Size - Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximu
