CSD60N62
CSD60N62 is N-Channel Trench Power MOSFET manufactured by CASS.
Description
The CSD60N62 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.
Features
- VDS=60V；ID=65A@ VGS=10V； RDS(ON)<8.2mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
Application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
To-252 Top View
Schematic Diagram
VDS = 60 V ID = 65 A RDS(ON) = 6.8 mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252
Reel Size
- Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS Gate-Source Voltage (VDS=0V)
ID (DC) ID (DC) IDM (pluse)
Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt
Peak Diode Recovery Voltage
PD...
