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CSD60N62 - N-Channel Trench Power MOSFET

Description

The CSD60N62 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.

Features

  • VDS=60V；ID=65A@ VGS=10V； RDS(ON).

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Datasheet Details

Part number CSD60N62
Manufacturer CASS
File Size 603.90 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CSD60N62 Datasheet

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Full PDF Text Transcription

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N-Channel Trench Power MOSFET General Description The CSD60N62 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features ● VDS=60V；ID=65A@ VGS=10V； RDS(ON)<8.2mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CSD60N62 To-252 Top View Schematic Diagram VDS = 60 V ID = 65 A RDS(ON) = 6.8 mΩ Package Marking and Ordering Information Device Marking Device Device Package CSD60N62 CSD60N62 TO-252 Reel Size - Table 1.
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