2SC3583 Datasheet - CEL

NPN Silicon Transistor

2SC3583 Features

* NF

* Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 +0.1

* 0.15 0.4 2 13 +0.1

* 0.05 2.9±0.2O 0.95 0.95 0.4 +0.1

* 0.06 0.16 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VC

2SC3583 General Description

The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pas.

2SC3583 Datasheet (1.70 MB)

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Datasheet Details

Part number:

2SC3583

Manufacturer:

CEL

File Size:

1.70 MB

Description:

Npn silicon transistor.
DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68133 / 2SC3583 JEITA Part No. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR +0.1UT <.

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2SC3583 NPN Silicon Transistor CEL

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2SC3583 Features

2SC3583 General Description

Datasheet Details

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