Datasheet Summary
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NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
Features
- LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz
Noise Figure, NF (dB)
NE67400 NE67483B
NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY
24 VDS = 3 V ID = 10 mA 20
- GATE WIDTH: WG = 280 µm
- GATE LENGTH: LG = 0.3 µm
3.0 GA
DESCRIPTION
NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device Features a low noise figure with high associated gain, employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with SiD2 and Si3N4 for scratch protection and surface stability. This device is suitable for both amplifier and oscillator...