NEC's NE677M04 is fabricated using NEC's HFT3 wafer process.
With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz.
| Part number | NE677M04 |
|---|---|
| Manufacturer | CEL |
| File Size | 89.90 KB |
| Description | NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR |
| Datasheet |
 NE677M04 Datasheet
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Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE677M04. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT POWER: P-1dB = 15 dBm ...
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| NE67483B | (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET |
| NE678M04 | NPN SILICON RF TRANSISTOR |
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| NE662M16-T3-A | NPN SILICON RF TRANSISTOR |
| NE664M04-A | NPN SILICON RF TRANSISTOR |
| NE664M04-T2-A | NPN SILICON RF TRANSISTOR |
