| Part number | NE677M04 |
|---|---|
| Datasheet | NE677M04_CEL.pdf |
| File Size | 89.90 KB |
| Manufacturer | CEL |
| Description | NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR |
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NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz. The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications.
| Part Number | Description |
|---|---|
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| NE67483B | (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET |
| NE678M04 | NPN SILICON RF TRANSISTOR |
| NE6510179A | MEDIUM POWER GaAs HJ-FET |
| NE662M04 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
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| NE662M16-A | NPN SILICON RF TRANSISTOR |
| NE662M16-T3-A | NPN SILICON RF TRANSISTOR |
| NE664M04-A | NPN SILICON RF TRANSISTOR |
| NE664M04-T2-A | NPN SILICON RF TRANSISTOR |
