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NE677M04 - NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

Description

NEC's NE677M04 is fabricated using NEC's HFT3 wafer process.

With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz.

Features

  • HIGH GAIN.

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Datasheet Details

Part number NE677M04
Manufacturer CEL
File Size 89.90 KB
Description NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE677M04 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 15.5 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30 2.05±0.1 1.25±0.1 3 2.0±0.1 R54 1.25 0.650.65 0.650.65 DESCRIPTION NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz. The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications.
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