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NE67483B - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET

Download the NE67483B datasheet PDF. This datasheet also covers the NE67400 variant, as both devices belong to the same (ne67400 / ne67483b) necs l to ku band low noise amplifier n-channel gaas mesfet family and are provided as variant models within a single manufacturer datasheet.

General Description

NEC's NE674 is a L to Ku Band low noise GaAs MESFET.

Key Features

  • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise Figure, NF (dB) NE67400 NE67483B NOISE FIGURE,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NE67400_CEL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NE67483B
Manufacturer CEL
File Size 137.60 KB
Description (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
Datasheet download datasheet NE67483B Datasheet

Full PDF Text Transcription for NE67483B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE67483B. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise Figure, NF (dB) NE674...

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E FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise Figure, NF (dB) NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 3 V ID = 10 mA 20 • GATE WIDTH: WG = 280 µm • GATE LENGTH: LG = 0.3 µm 3.0 GA 16 2.0 12 DESCRIPTION NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device features a low noise figure with high associated gain, employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with SiD2 and Si3N4 for scratch protection and surface stability. This device is suitable for both amplifier and oscillator applications.

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