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NESG2101M16 - NPN SiGe HIGH FREQUENCY TRANSISTOR

General Description

NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF

Key Features

  • HIGH.

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Datasheet Details

Part number NESG2101M16
Manufacturer CEL
File Size 253.61 KB
Description NPN SiGe HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NESG2101M16 Datasheet

Full PDF Text Transcription for NESG2101M16 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NESG2101M16. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute...

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URES • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.

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