NESG2101M16 transistor equivalent, npn sige high frequency transistor.
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* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF.
including low noise amplifiers, medium power amplifiers, and oscillators
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMB.
NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators
ELECTRICAL CHARACTERISTICS (TA = 25.
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