CEB80N75 - N-Channel MOSFET

CET

Key Features

Type CEP80N75 CEB80N75 CEF80N75 VDSS 75V 75V 75V RDS(ON) 13mΩ 13mΩ 13mΩ ID 80A 80A 80A e CEP80N75/CEB80N75 CEF80N75 @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. D G G D S S CEB SERIES TO-263(DD-PAK) G G CEP SERIES TO-220 D S CEF SERIES TO-220F S.

CEB80N75 n-channel mosfet by CET - Datasheet Preview

Datasheet Details

Part number	CEB80N75
Manufacturer	CET
File Size	399.22 KB
Description	N-Channel MOSFET
Datasheet	CEB80N75 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP80N75 CEB80N75 CEF80N75 VDSS 75V 75V 75V RDS(ON) 13mΩ 13mΩ 13mΩ ID 80A 80A 80A e CEP80N75/CEB80N75 CEF80N75 @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. D G G D S S CEB SERIES TO-263(DD-PAK) G G CEP SERIES TO-220 D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD EAS IAS TJ,Tstg f TO-220F Units V V 75 ±20 80 320 200 1.3 880 45 -55 to 175 80 75 0.