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CEB80N75 Datasheet Preview

CEB80N75 Datasheet

N-Channel MOSFET

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CEP80N75/CEB80N75
CEF80N75
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP80N75
CEB80N75
CEF80N75
VDSS
75V
75V
75V
RDS(ON)
13m
13m
13m
ID
80A
80A
80A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-220F full-pak for through hole.
D
D
G
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
TO-220F
VDS 75
VGS ±20
ID 80 80 e
IDM f
320 320 e
200 75
PD 1.3 0.5
EAS
IAS
TJ,Tstg
880
45
-55 to 175
880
45
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2
65
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2007.Feb
http://www.cetsemi.com




CET

CEB80N75 Datasheet Preview

CEB80N75 Datasheet

N-Channel MOSFET

No Preview Available !

CEP80N75/CEB80N75
CEF80N75
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 40A
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 15V, ID = 40A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 37.5V, ID = 45A,
VGS = 10V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 60V, ID = 75A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS g
VSD
VGS = 0V, IS = 75A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L =0.87mH, IAS =45A, VDD = 38V, RG = 25Ω, Starting TJ = 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 51A .
Min
75
2
Typ Max Units
1
100
-100
V
µA
nA
nA
4V
10 13 m
45
3550
580
40
S
pF
pF
pF
24 48
5 10
61 122
18 36
79.3 105.5
20.6
25.9
ns
ns
ns
ns
nC
nC
nC
75 A
1.5 V
2


Part Number CEB80N75
Description N-Channel MOSFET
Maker CET
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CEB80N75 Datasheet PDF






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