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CEB840G Datasheet Preview

CEB840G Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEP840G/CEB840G
CEF840G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP840G
CEB840G
VDSS
500V
500V
CEF840G
500V
RDS(ON)
0.85
0.85
0.85
ID @VGS
8A 10V
8A 10V
8A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 500
VGS ±30
ID 8 8 e
IDM f
32 32 e
125 40
PD 1.0 0.32
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.0
62.5
3.1
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.Nov.
http://www.cet-mos.com




CET

CEB840G Datasheet Preview

CEB840G Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEP840G/CEB840G
CEF840G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 500V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 4.8A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 50V, ID = 4.8A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 250V, ID = 8A,
VGS = 10V, RGEN = 9.1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 400V, ID = 8A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS f
VSD
VGS = 0V, IS = 8A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 4.6A .
Min
500
2
Typ
0.65
7
1240
145
20
20
9
48
8
33
6.2
13.9
Max Units
25
100
-100
V
µA
nA
nA
4V
0.85
S
pF
pF
pF
40 ns
18 ns
92 ns
16 ns
43.8 nC
nC
nC
8A
1.5 V
2


Part Number CEB840G
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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