CEC8218 - Dual N-Channel MOSFET

CET

Key Features

20V, 7A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 28mΩ @VGS = 2.5V. RDS(ON) = 48mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D.
1K G1.
1K G2 S1.
Typical value by design 5 67 8 Bottom View DFN3.
3 4 321.

CEC8218 dual n-channel mosfet by CET - Datasheet Preview

Datasheet Details

Part number	CEC8218
Manufacturer	CET
File Size	637.99 KB
Description	Dual N-Channel MOSFET
Datasheet	CEC8218 Datasheet

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Full PDF Text Transcription (Reference)

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CEC8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 7A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 28mΩ @VGS = 2.5V. RDS(ON) = 48mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D *1K G1 *1K G2 S1 *Typical value by design 5 67 8 Bottom View DFN3*3 4 321 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 7 IDM 28 Maximum Power Dissipation PD 1.