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CEG2287 Datasheet Preview

CEG2287 Datasheet

Dual P-Channel Enhancement Mode Field Effect Transistor

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CEG2287 pdf
CEG2287
Dual P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -4.7A, RDS(ON) = 30m@VGS = -10V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -20
VGS ±12
ID -4.7
IDM -18
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.Oct
http://www.cetsemi.com



CET
CET

CEG2287 Datasheet Preview

CEG2287 Datasheet

Dual P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEG2287 pdf
CEG2287
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.7A
VGS = -4.5V, ID = -3.8A
VDS = -1.8V, ID = -2.5A
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -10V, ID = -1A,
VGS = -4.5V, RGEN = 24
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -16V, ID = -4.7A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -2.1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-20
-0.5
Typ
25
36
40
2030
300
195
11
9
355
109
19
4.4
2.7
Max Units
-1
100
-100
V
µA
nA
nA
-1.0 V
30 m
55 m
S
pF
pF
pF
20 ns
20 ns
710 ns
220 ns
25 nC
nC
nC
-4.7 A
-1.2 V
8
2


Part Number CEG2287
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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