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CEH2310 Datasheet, CET

CEH2310 transistor equivalent, n-channel enhancement mode field effect transistor.

CEH2310 Avg. rating / M : 1.0 rating-16

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CEH2310 Datasheet

Features and benefits

30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead.

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CEH2310 Page 1 CEH2310 Page 2

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