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CEH2312 Datasheet Preview

CEH2312 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEH2312 pdf
CEH2312
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 6.2A , RDS(ON) = 33m@VGS = 4.5V.
RDS(ON) = 45m@VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
G(3)
D(1,2,5,6,)
S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 20
VGS ±12
ID 6.2
IDM 25
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.May
http://www.cetsemi.com



CET
CET

CEH2312 Datasheet Preview

CEH2312 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEH2312 pdf
CEH2312
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 4.5A
0.55
27
35
1.1 V
33 m
45 m
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 6.2A
VDS = 8V, VGS = 0V,
f = 1.0 MHz
10 S
560 pF
105 pF
75 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 6A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1A
8 15 ns
10 20 ns
22 45 ns
5 10 ns
4.9 6.5 nC
0.9 nC
1.4 nC
6.2 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
8
2


Part Number CEH2312
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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