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CEP1195 Datasheet Preview

CEP1195 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEP1195/CEB1195
CEF1195
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP1195
CEB1195
CEF1195
VDSS
900V
RDS(ON)
2.75Ω
ID
5A
@VGS
10V
900V 2.75Ω
5A
10V
900V 2.75Ω 5A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energyh
Single Pulsed Avalanche Current h
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
TO-220F
VDS
VGS
ID
IDM e
900
±30
5
20
5d
20d
166 50
PD 1.3 0.4
EAS 22.5
IAS 3
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2.5
65
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
.
Details are subject to change without notice .
1
Rev 4. 2015.June
http://www.cet-mos.com




CET

CEP1195 Datasheet Preview

CEP1195 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEP1195/CEB1195
CEF1195
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS =810V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2.5A
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID =5A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V,ID = 5A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
ISf
VSDg
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed.
e.Pulse width limited by safe operating area.
f.Full package IS(max) = 3.2A.
g.Full package VSD test condition IS = 3.2A.
h.L = 5mH, IAS =3A, VDD = 50V, RG = 25, Starting TJ = 25 C
VGS = 0V, IS = 5A
Min
900
2
Typ
2.35
1440
130
10
30
21.5
80
22
30
6
10
Max Units
10
100
-100
V
µA
nA
nA
4V
2.75
pF
pF
pF
60 ns
43 ns
160 ns
44 ns
39 nC
nC
nC
5A
1.4 V
2


Part Number CEP1195
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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