12N60B
Key Features
- 12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A
- Low gate charge
- Low Ciss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: 12N60B
- Description: N-CHANNEL MOSFET
- Category: MOSFET
- Manufacturer: CHONGQING PINGYANG
- Size: 187.69 KB
Datasheets by Manufacturer
- 12N60CD1 — IXYS — IGBT
- 12N60 — Unisonic Technologies — N-CHANNEL MOSFET
- 12N60C3D — Fairchild Semiconductor — HGTG12N60C3D
- 12N60M2 — STMicroelectronics — N-channel Power MOSFET
- 12N60AF — Nell Power Semiconductor — N-Channel Power MOSFET
- 12N60A — Nell Power Semiconductor — N-Channel Power MOSFET
- 12N60C — IXYS — IGBT
- 12N65AF — Nell Power Semiconductor — N-Channel Power MOSFET
- 12N65M2 — STMicroelectronics — N-Channel Power MOSFET
- 12N65 — HAOHAI — N-Channel MOSFET