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50N06(F,B,H)
50A mps,60 Volts N-CHANNEL MOSFET
FEATURE
50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 50N06
ITO-220AB 50N06F
TO-263 50N06B
TO-262 50N06H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
50N06 60 ±20 52.4 210 990 52.4 12 7.
50N06H Datasheet
