C3M0350120J mosfet equivalent, silicon carbide power mosfet.
Package
* 3rd generation SiC MOSFET technology
* Low impedance package with driver source pin
* 7mm of creepage distance between drain and source
* H.
TAB Drain
1 2 34 5 6 7 G KS S S S S S
Drain (TAB)
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
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