CMPA0527005F Key Features
- Up to 2.7 GHz Operation
- 8 W Typical Output Power
- 20 dB Small Signal Gain
- Application Circuit for 0.5
- 2.7 GHz
- 50% Efficiency
- 50 V Operation
- March 2020
- Part: CMPA0527005F
- Manufacturer: Cree
- Size: 1.08 MB
Related Cree Datasheets
| Part Number | Description |
|---|---|
| CMPA0060002F | GaN MMIC Power Amplifier |
| CMPA0060025F | GaN MMIC Power Amplifier |
| CMPA1D1E025F | Power Amplifier |
| CMPA1D1E080F | Power Amplifier |
| CMPA2560025F | GaN MMIC Power Amplifier |
CMPA0527005F Description
CMPA0527005F 5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 to 2.7 GHz.