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CMPA1D1E080F
80 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN, Power Amplifier
Cree’s CMPA1D1E080F is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Integrated Circuit (MMIC). It is designed specifically for high efficiency, high gain, and wide bandwidth capabilities while meeting OQPSK linearity, which makes CMPA1D1E080F ideal for 13.75 - 14.5 GHz commercial Ku Band satellite communications applications. The transistor is supplied in a 14 lead metal/ceramic flange package.
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Typical Performance Over 13.75 - 14.5 GHz (TC = 25˚C)
Parameter
13.75 GHz 14 GHz 14.25 GHz 14.5 GHz
Units
Small Signal Gain
28.8
28.3
29
28.6
dB
ACLR1
-29.3
-29.5
-27.3
-24.5
dBc
Power Gain1
25.3
24
24.7
22.
CMPA1D1E080F Datasheet
