CMPA1D1E080F Overview
CMPA1D1E080F 80 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN, Power Amplifier Cree’s CMPA1D1E080F is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Integrated Circuit (MMIC). It is designed specifically for high efficiency, high gain, and wide bandwidth capabilities while meeting OQPSK linearity, which makes CMPA1D1E080F ideal for 13.75 - 14.5 GHz mercial Ku Band satellite...
CMPA1D1E080F Key Features
- 28 dB Small Signal Gain
- 80 W CW Power
- 500 MHz Video Bandwidth
- 40 W Linear Power Under OQPSK