CMPA1D1E080F
CMPA1D1E080F is Power Amplifier manufactured by Cree.
80 W, 13.75
- 14.5 GHz, 40 V, Ku-Band GaN, Power Amplifier
Cree’s CMPA1D1E080F is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Integrated Circuit (MMIC). It is designed specifically for high efficiency, high gain, and wide bandwidth capabilities while meeting OQPSK linearity, which makes CMPA1D1E080F ideal for 13.75
- 14.5 GHz mercial Ku Band satellite munications applications. The transistor is supplied in a 14 lead metal/ceramic flange package.
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Typical Performance Over 13.75
- 14.5 GHz (TC = 25˚C)
Parameter
13.75 GHz 14 GHz 14.25 GHz 14.5 GHz
Units
Small Signal...
