Overview: CMPA1D1E080F
80 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN, Power Amplifier Cree’s CMPA1D1E080F is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Integrated Circuit (MMIC). It is designed specifically for high efficiency, high gain, and wide bandwidth capabilities while meeting OQPSK linearity, which makes CMPA1D1E080F ideal for 13.75 - 14.5 GHz mercial Ku Band satellite munications applications. The transistor is supplied in a 14 lead metal/ceramic flange package. PaPcNka:gCeMTPyAp1eD:414E0028202F Typical Performance Over 13.75 - 14.5 GHz (TC = 25˚C) Parameter 13.75 GHz 14 GHz 14.25 GHz 14.5 GHz Units Small Signal Gain 28.8 28.3 29 28.6 dB ACLR1 -29.3 -29.5 -27.3 -24.5 dBc Power Gain1 25.3 24 24.7 22.4 dB Power Added Efficiency1 18.3 17.3 18.2 18.5 % Note1: Measured at PAVE = 46 dBm in the CMPA1D1E080F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2.
