Overview: CMPA0527005F
5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT
CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 to 2.7 GHz. The transistor is available in a 6 leaded flange package. PackPaNg:eCTMyPpAes0:52474000252F1 Typical Performance Over 0.5 - 2.7 GHz (TC = 25˚C), 50 V, PIN = 24 dBm, CW Parameter 0.5 GHz 1.0 GHz 1.5 GHz 2.0 GHz 2.7 GHz Small Signal Gain 20.4 20.8 21 20.5 19.5 Output Power 7.8 9.3 9.1 8.7 6.6 Drain Efficiency 58.5 53.8 49.2 47.1 41.5 Note: Measured in the CMPA0527005F-AMP1 application circuit.
