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E3M0065090D - Silicon Carbide Power MOSFET

Key Features

  • Package.
  • 3rd generation SiC MOSFET technology.
  • High blocking voltage with low On-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant.
  • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits.
  • Higher system efficiency.
  • Reduced cooling requirements.
  • Increased power density.
  • Increased system switching frequ.

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Full PDF Text Transcription for E3M0065090D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for E3M0065090D. For precise diagrams, and layout, please refer to the original PDF.

VDS 900 V E3M0065090D Silicon Carbide Power MOSFET E-Series Automotive ID @ 25˚C 36 A RDS(on) 65 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFE...

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N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies Part Number E3M0065090D Package TO-247-3 Marking E3M0065090 Maximum Rat

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