E3M0280090D
E3M0280090D is Silicon Carbide Power MOSFET manufactured by Cree.
VDS 900 V
Silicon Carbide Power MOSFET E-Series Automotive
ID @ 25˚C 11.5 A RDS(on) 280 mΩ
N-Channel Enhancement Mode
Features
Package
- 3rd generation Si C MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, Ro HS pliant
- Automotive Qualified (AEC-Q101) and PPAP Capable
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
Applications
- Automotive EV battery chargers
- Renewable energy
- High voltage DC/DC converters
- Tele Power Supplies
Part Number E3M0280090D
Package TO-247-3
Marking E3M0280090
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
VDSmax VGSmax...
