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E3M0065090D Datasheet Silicon Carbide Power MOSFET

Manufacturer: Cree (now Wolfspeed)

Overview: VDS 900 V E3M0065090D Silicon Carbide Power MOSFET E-Series Automotive ID @ 25˚C 36 A RDS(on) 65 mΩ N-Channel Enhancement.

Key Features

  • Package.
  • 3rd generation SiC MOSFET technology.
  • High blocking voltage with low On-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant.
  • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits.
  • Higher system efficiency.
  • Reduced cooling requirements.
  • Increased power density.
  • Increased system switching frequ.

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