* Package
* 3rd generation SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant
* Automotive Qualif
E3M0280090D Datasheet (568.32 KB)
E3M0280090D
CREE
568.32 KB
Silicon carbide power mosfet.
VDS 900 V E3M0280090D Silicon Carbide Power MOSFET E-Series Automotive ID @ 25˚C 11.5 A RDS(on) 280 mΩ N-Channel Enhancement Mode .
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