CRTD080N04L2-G Datasheet, CR Micro

* Fast Switching
* Low ON Resistance(Rdson≤7.8mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Tes.

The package form is TO-252, which accords with the RoHS standard. Features：
* Fast Switching
* Low ON Resist.

CRTD080N04L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device can VDSS ID（Silicon limited cu.

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