* Fast Switching
* Low ON Resistance(Rdson≤4.2 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Te.

The package form is TO-252, which accords with the RoHS standard. Features：
* Fast Switching
* Low ON Resist.

CRTD052N02S2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited cur.

CRTD055N03L

CRTD055N03LC

CRTD058N04L2-G

CRTD019N03L2-G

CRTD028N03L2-G

CRTD028N04L2-G

CRTD032N03L2P

CRTD034N04L2-G

CRTD039N04L2-G

CRTD045N03L

CRTD045N04L2P

CRTD063N04L

CRTD077NE6N

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