CRTD080P04L2P mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤8 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test.
The
package form is TO-252, which accords with the RoHS standard.
Features：
* Fast Switching
* Low ON Resist.
CRTD080P04L2P, the silicon P-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ
performance and enhance the avalanche energy. This device is
suit.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 797.36KB)