CS10N60A0R mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤0.9Ω)
* Low Gate Charge (Typical Data:32nC)
* Low Reverse transfer capacitances(Typical:7.5pF)
* 100%.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
VDSS
600
CS10N60 A0R, the silicon N-channel Enhanced ID
10
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
130
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.68
performance and enhance the avalanc.
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