l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:90.5 nC) l Low Reverse transfer capacitances(Typical:19 pF) l 100% Single Pulse avala.

Power switch circuit of electron ballast and adaptor. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter V.

VDSS 600 V CS24N60 ANR, the silicon N-channel Enhanced ID 24 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 420 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.21 Ω performance and enhance.

CS24N04A4

CS24N40A8

CS24N40FA9H

CS24N50ANHD

CS240610

CS240650

CS240N06A0

CS240N06A8

CS241020

CS241210

CS241250

CS20-12io1

CS20-14io1