* Fast Switching
* Low ON Resistance(Rdson≤5Ω)
* Low Gate Charge (Typical Data: 9.5nC)
* Low Reverse transfer capacitances(Typical:3pF)
* 100% S.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS2N65 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe.

CS2N65A4HY

CS2N65A3

CS2N65A3HY

CS2N65A3R

CS2N65A3R-G

CS2N65A3RD

CS2N65A8

CS2N65FA9HY

CS2N65FA9R

CS2N60

CS2N60A23H

CS2N60A3H

CS2N60A4H