CS60N03AQ4-G datasheet, mosfet equivalent, CR Micro

Features and benefits

* Fast Switching
* Low ON Resistance(Rdson≤4. 5 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test <.

Application

The package form is PDFN3.3*3.3, which accords with the RoHS standard. Features：
* Fast Switching
* Low ON Resi.

Description

CS60N03 AQ4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load sw.

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