* Fast Switching
* Low ON Resistance(Rdson≤2.9Ω)
* Low Gate Charge (Typical Data:13 nC)
* Low Reverse transfer capacitances(Typical:.1.8 pF)
* 1.

Electric welder、Inverter. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS.

CS6N120 AHR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 1200 6 43 2.3 performance and enhance the avalanche ener.

CS6N120A0R-G

CS6N120A8R-G

CS6N120AKR-G

CS6N120FA9R-G

CS6N40A3R

CS6N40A4R

CS6N40FA9R

CS6N60

CS6N60A3D

CS6N60A3HDY

CS6N60A3TY

CS6N60A4D

CS6N60A4H