* Fast Switching
* Low ON Resistance(Rdson≤1Ω)
* Low Gate Charge (Typical Data:12.6nC)
* Low Reverse transfer capacitances(Typical:5.1pF)
* 100%.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS6N40F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow.

CS6N40A3R

CS6N40A4R

CS6N120A0R-G

CS6N120A8R-G

CS6N120AHR-G

CS6N120AKR-G

CS6N120FA9R-G

CS6N60

CS6N60A3D

CS6N60A3HDY

CS6N60A3TY

CS6N60A4D

CS6N60A4H