* Fast Switching
* Low ON Resistance(Rdson≤2.9Ω)
* Low Gate Charge (Typical Data:13 nC)
* Low Reverse transfer capacitances(Typical:.1.8 pF)
* 1.

Electric welder、Inverter. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/d.

CS6N120F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various .

CS6N120A0R-G

CS6N120A8R-G

CS6N120AHR-G

CS6N120AKR-G

CS6N40A3R

CS6N40A4R

CS6N40FA9R

CS6N60

CS6N60A3D

CS6N60A3HDY

CS6N60A3TY

CS6N60A4D

CS6N60A4H