CS6N120FA9R-G Datasheet | CR Micro

Description ： CS6N120F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the Ro HS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤2.9Ω) - Low Gate Charge (Typical Data:13 n C) - Low Reverse transfer capacitances(Typical:.1.8 p F) - 100% Single Pulse avalanche energy Test - Halogen Free Applications： Electric welder、Inverter. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range VDSS ID PD (TC=25℃) RDS(ON)Typ 1200 6 43 2.3 Rating 1200 6 3.7 24 ±30 102 5.0 43 0.35 150，- 55 to 150 V A W Ω Units V A A A V m J V/ns W W/℃ ℃ WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2022V02 CS6N120F A9R-G Electrical Characteristics（TJ= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS IDSS IGSS(F) IGSS(R) Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage VGS=0V,...