CS6N120AKR-G Datasheet - CR Micro

CS6N120AKR-G Silicon N-Channel Power MOSFET

CS6N120 AKR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

CS6N120AKR-G Features

* Fast Switching

* Low ON Resistance(Rdson≤2.9Ω)

* Low Gate Charge (Typical Data:13.1 nC)

* Low Reverse transfer capacitances(Typical:.2.3 pF)

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Electric welder、Inverter. Absolute（TJ= 25℃ unless other

CS6N120AKR-G-CRMicro.pdf