CS6N120AKR-G - Silicon N-Channel Power MOSFET
CS6N120 AKR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization
CS6N120AKR-G Features
* Fast Switching
* Low ON Resistance(Rdson≤2.9Ω)
* Low Gate Charge (Typical Data:13.1 nC)
* Low Reverse transfer capacitances(Typical:.2.3 pF)
* 100% Single Pulse avalanche energy Test
* Halogen Free Applications： Electric welder、Inverter. Absolute（TJ= 25℃ unless other
