CS6N60A3HDY

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS6N60A3HDY Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS6N60A3HDY General Description

CS6N60 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS6N60A3HDY Datasheet (230.20 KB)

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Part number:

CS6N60A3HDY

Manufacturer:

Huajing Microelectronics

File Size:

230.20 KB

Description:

Silicon n-channel power mosfet.

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CS6N60A3HDY Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS6N60A3HDY Features

CS6N60A3HDY General Description

Datasheet Details

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