Datasheet Details
- Part number
- CS6N60A3HDY
- Manufacturer
- Huajing Microelectronics
- File Size
- 230.20 KB
- Datasheet
- CS6N60A3HDY-HuajingDiscreteDevices.pdf
- Description
- Silicon N-Channel Power MOSFET
CS6N60A3HDY Description
Silicon N-Channel Power MOSFET CS6N60 A3HDY ○R General .
CS6N60 A3HDY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improv.
CS6N60A3HDY Applications
* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-
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