CS6N60A3HDY Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET CS6N60 A3HDY ○R General .
CS6N60 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improv.

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Datasheet Specifications

Part number: CS6N60A3HDY
Manufacturer: Huajing Microelectronics
File Size: 230.20 KB
Datasheet: CS6N60A3HDY-HuajingDiscreteDevices.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-

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CS6N60A3HDY Silicon N-Channel Power MOSFET Huajing Microelectronics

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