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CS6N120FA9R-G - Silicon N-Channel Power MOSFET

CS6N120FA9R-G Description

Silicon N-Channel Power MOSFET ○R CS6N120F A9R-G General .
CS6N120F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, impr.

CS6N120FA9R-G Features

* Fast Switching
* Low ON Resistance(Rdson≤2.9Ω)
* Low Gate Charge (Typical Data:13 nC)
* Low Reverse transfer capacitances(Typical:.1.8 pF)
* 100% Single Pulse avalanche energy Test

CS6N120FA9R-G Applications

* Electric welder、Inverter. Absolute(TJ= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ,Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Puls

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Datasheet Details

Part number
CS6N120FA9R-G
Manufacturer
CR Micro
File Size
956.42 KB
Datasheet
CS6N120FA9R-G-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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