CS6N60A4TY Datasheet - Huajing Microelectronics

CS6N60A4TY Silicon N-Channel Power MOSFET

CS6N60 A4TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

CS6N60A4TY Features

* l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 6A 85 W 1.4 Ω Applications： Power switch circuit of adaptor and charger. Abso

CS6N60A4TY-HuajingMicroelectronics.pdf