CS6N60A3D Datasheet - Huajing Microelectronics

CS6N60A3D Silicon N-Channel Power MOSFET

CS6N60 A3D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS6N60A3D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS6N60A3D-HuajingMicroelectronics.pdf