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CS6N60A4D

Silicon N-Channel Power MOSFET

CS6N60A4D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS6N60A4D General Description

CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 95 1.0 performance and enhance the avalanche energy. The transistor can be used in various power switch.

CS6N60A4D Datasheet (351.27 KB)

Preview of CS6N60A4D PDF

Datasheet Details

Part number:

CS6N60A4D

Manufacturer:

Huajing Microelectronics

File Size:

351.27 KB

Description:

Silicon n-channel power mosfet.

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CS6N60A4D Silicon N-Channel Power MOSFET Huajing Microelectronics

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