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CS6N60A4D Datasheet - Huajing Microelectronics

CS6N60A4D-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS6N60A4D

Manufacturer:

Huajing Microelectronics

File Size:

351.27 KB

Description:

Silicon n-channel power mosfet.

CS6N60A4D, Silicon N-Channel Power MOSFET

CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 95 1.0 performance and enhance the avalanche energy.

The transistor can be used in various power switch

CS6N60A4D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter

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