CS6N60A4D Datasheet, Mosfet, Huajing Microelectronics

CS6N60A4D Features

• Mosfet l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applicati

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Part number:

CS6N60A4D

Manufacturer:

Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction

CS6N60A4D Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 V

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CS6N60A4D

Huajing Microelectronics

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