CS6N60A3TY Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS6N60A3TY, Silicon N-Channel Power MOSFET

CS6N60 A3TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS6N60A3TY Features

* l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Par