Part number:
CS6N60A3TY
Manufacturer:
Huajing Microelectronics
File Size:
319.39 KB
Description:
Silicon n-channel power mosfet.
CS6N60A3TY-HuajingMicroelectronics.pdf
Datasheet Details
Part number:
CS6N60A3TY
Manufacturer:
Huajing Microelectronics
File Size:
319.39 KB
Description:
Silicon n-channel power mosfet.
CS6N60A3TY, Silicon N-Channel Power MOSFET
CS6N60 A3TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization a
CS6N60A3TY Features
* l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Par
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