Datasheet4U Logo Datasheet4U.com

CS6N60A3TY

Silicon N-Channel Power MOSFET

CS6N60A3TY Features

* l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Par

CS6N60A3TY General Description

CS6N60 A3TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS6N60A3TY Datasheet (319.39 KB)

Preview of CS6N60A3TY PDF

Datasheet Details

Part number:

CS6N60A3TY

Manufacturer:

Huajing Microelectronics

File Size:

319.39 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS6N60A3D Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS6N60A3HDY Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS6N60A4D Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS6N60A4H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS6N60A4TY Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS6N60A7H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS6N60A8H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS6N60 VDMOS (ETC)

CS6N60F N-Channel MOSFET (LZG)

CS6N60F VDMOS (ETC)

TAGS

CS6N60A3TY Silicon N-Channel Power MOSFET Huajing Microelectronics

Image Gallery

CS6N60A3TY Datasheet Preview Page 2 CS6N60A3TY Datasheet Preview Page 3

CS6N60A3TY Distributor