CS6N60A3TY Datasheet, Mosfet, Huajing Microelectronics

CS6N60A3TY Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche energy Test Ap

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CS6N60A3TY

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS6N60 A3TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct

CS6N60A3TY Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS6N60A3TY

Huajing Microelectronics

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