Datasheet Details
- Part number
- CS6N120A8R-G
- Manufacturer
- CR Micro
- File Size
- 901.16 KB
- Datasheet
- CS6N120A8R-G-CRMicro.pdf
- Description
- Silicon N-Channel Power MOSFET
CS6N120A8R-G Description
Silicon N-Channel Power MOSFET ○R CS6N120 A8R-G General .
CS6N120 A8R-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, impro.
CS6N120A8R-G Features
* Fast Switching
* Low ON Resistance(Rdson≤2.9Ω)
* Low Gate Charge (Typical Data:13.1 nC)
* Low Reverse transfer capacitances(Typical:.2.3 pF)
* 100% Single Pulse avalanche energy Test
CS6N120A8R-G Applications
* Electric welder、Inverter. Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID IDMa1 VGS EAS a2 dv/dt a3
PD
TJ，Tstg
Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Puls
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