CS6N120A8R-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS6N120 A8R-G General .
CS6N120 A8R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, impro.

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Datasheet Specifications

Part number: CS6N120A8R-G
Manufacturer: CR Micro
File Size: 901.16 KB
Datasheet: CS6N120A8R-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤2.9Ω)
* Low Gate Charge (Typical Data:13.1 nC)
* Low Reverse transfer capacitances(Typical:.2.3 pF)
* 100% Single Pulse avalanche energy Test

Applications

* Electric welder、Inverter. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Puls

CS6N120A8R-G Distributors

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CS6N120A8R-G Silicon N-Channel Power MOSFET CR Micro

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