CS6N60A7H Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS6N60A7H, Silicon N-Channel Power MOSFET

CS6N60 A7H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization an

CS6N60A7H Features

* l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 19.5nC) l Low Reverse transfer capacitances(Typical: 7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol P