* Fast Switching
* Low ON Resistance(Rdson≤1.3Ω)
* Low Gate Charge (Typical Data:24nC)
* Low Reverse transfer capacitances(Typical:5.5pF)
* 100%.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS7N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe.

CS7N60A8HD

CS7N60A3R

CS7N60A4R

CS7N60A7HD

CS7N60

CS7N60FA9HD

CS7N60FA9HDY

CS7N60FA9R

CS7N65A0D

CS7N65A0R

CS7N65A3R

CS7N65A3TDY

CS7N65A4R