l Fast Switching l Low ON Resistance(Rdson≤1.8Ω) l Low Gate Charge (Typical Data: 33.9nC) l Low Reverse transfer capacitances(Typical:11.2pF) l 100% Single Pulse avalanc.

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID I.

CS7N80F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS7N80FA9

CS7N80FA9RZ-G

CS7N80A8

CS7N80A8R

CS7N80ARR-G

CS7N03AE-1

CS7N10AQ2-1

CS7N60

CS7N60A3R

CS7N60A4R

CS7N60A7HD

CS7N60A8HD

CS7N60A8R