CS80N07A0 mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤7.9mΩ) l Low Gate Charge (Typical Data:51nC) l Low Reverse transfer capacitances(Typical:174pF) l 100% Single Pulse avalanche.
Power switch circuit of adaptor and charger.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID I.
VDSS
70
V
CS80N07 A0, the silicon N-channel Enhanced
ID（Silicon limited current） 80
A
VDMOSFETs, is obtained by advanced Trench Technology PD(TC=25℃)
156 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
6.5 mΩ
performance.
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