CS80N07A8 mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤7.9mΩ)
* Low Gate Charge (Typical Data:51nC)
* Low Reverse transfer capacitances(Typical:174pF)
* 100% Si.
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID .
VDSS
70
V
CS80N07 A8, the silicon N-channel Enhanced
ID(Silicon limited current) 80
A
VDMOSFETs, is obtained by advanced Trench Technology
PD(TC=25℃)
156 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
6.5 mΩ
performanc.
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