CS80N08A4 mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤8.5mΩ)
* Low Gate Charge (Typical Data:59.8nC)
* Low Reverse transfer capacitances(Typical:237pF)
* 100% .
Power switch circuit of adaptor and charger.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VD.
CS80N08 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
VDSS ID（Silicon limited current） ID（Pac.
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