CS8N05AEP-G mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching
l Low ON Resistance (Rdson≤25mΩ)
l Low Reverse transfer capacitances(Typical:71pF)
l 100% Single Pulse avalanche energy Test
l Halogen free
Applic.
Power switch circuit of adaptor and charger.
Absolute（TA= 25℃ unless otherwise specified）：
Symbol
Parameter
VDSS
ID.
VDSS
45
V
CS8N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is ID
8
A
obtained by advanced trench Technology which reduce the PD(TC=25℃)
3.1
W
conduction loss, improve switching performance and
RDS(ON)Typ (VGS=10V)
15
mΩ
enhance t.
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